STUDY OF POLARITY DETERMINATION IN SILICON CARBIDE STRUCTURE BY ETCHING METHOD,

Abstract

The authors describe their experiments on negative and positive c faces in silicon carbide. The authors conclude that the faces can be distinguished by observing the bluntness and sharpness of the edges occurring due to etching speed variation, and the positive c face is a carbon face and the negative one, a silicon face.

Document Details

Document Type
Technical Report
Publication Date
Aug 26, 1968
Accession Number
AD0683199

Entities

People

  • Kuo Ch'ang-lin
  • T'ang Shih-hsin

Organizations

  • National Air and Space Intelligence Center

Tags

DTIC Thesaurus Topics

  • Carbides
  • Compound Semiconductors
  • Elements
  • Group 14 Elements
  • Metalloids
  • Polarity
  • Semiconductors
  • Sharpness
  • Silicon
  • Silicon Carbide

Readers

  • Aerodynamics/Aeronautics.
  • Surface Engineering/Surface Coating Technology.
  • Tribology (the study of the boundary interaction between sliding surfaces, lubrication, wear and friction).