A VANADIUM OXIDE FILM 'SWITCHING' ELEMENT.

Abstract

Vanadium dioxide films were sputtered onto alumina substrates by a radio-frequency method. The films were heat-treated at 600C to insure good crystallinity. At 68C, the resistivity changed sharply at this so-called metal-semiconductor transition temperature. The resistance of the films can also be 'switched' under an applied voltage through essentially a thermal process. For an applied voltage of 200 volts, for instance, the estimated transition time is of the order of a fraction of a microsecond. (Author)

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1969
Accession Number
AD0683368

Entities

People

  • F. M. Collins
  • T. N. Kennedy

Organizations

  • Rensselaer Polytechnic Institute

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Elements
  • Films
  • Frequency
  • Metals
  • Microsecond Time
  • Oxide Films
  • Oxides
  • Radio Frequency
  • Resistance
  • Semiconductors
  • Solid State Electronics
  • Transition Temperature
  • Transitions
  • Vanadium

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene