TRANSVERSE IMPACT IONIZATION IN SEMICONDUCTORS,
Abstract
The electron distribution function in the presence of crossed electric and magnetic fields is calculated, for a n-type semiconductor with isotropic electron scattering by acoustical and optical phonons. The results are applied to a semiconductor rod, subject to a longitudinally applied electric field and a transverse magnetic field. It is found, in agreement with measurements by M. Toda and M. Glicksman, that the ionization rate can increase with increasing magnetic field, due to the generated Hall electric field. The effect is closely related to a magnetic trapping of electrons in the low energy, high mobility region. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1969
- Accession Number
- AD0683426
Entities
People
- Donald J. Nelson
- Helmut Schmidt
Organizations
- Boeing