RESEARCH IN EXPERIMENTAL AND THEORETICAL PHYSICS.

Abstract

The research involved the study of field-effect devices. The two primary areas were: (1) analysis involving the important silicon metal-oxide-semiconductor field-effect transistors (MOSFET) and (2) consideration of novel field-effect devices. Since MOSFET's frequently are used with degenerate carrier concentrations in the channel, Fermi-Dirac statistics, rather than Maxwell-Boltzmann statistics, are appropriate in the analysis. (Author)

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1969
Accession Number
AD0683612

Entities

People

  • R. S. Muller

Organizations

  • University of California, Berkeley

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Field Effect Transistors
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Mosfet Semiconductors
  • Oxides
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Statistics
  • Transistors

Readers

  • Calculus or Mathematical Analysis
  • Integrated Circuit Design and Technology.
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene