INFLUENCE OF DYNAMIC STRAIN ON SILICON JUNCTIONS.
Abstract
The effect of large strains on the electrical properties of p-n junctions was studied by electromagnetically driving with a sinusoidal force a cantilevered silicon beam into which the junctions are diffused. Stress levels greater than 10 to the 9th power dynes/sq cm was obtained at the natural resonant frequency of the beam (typically 200 Hz). An asymmetry was observed in the junction current which shows clearly a difference in response to compressive and tensile forces. With increasing compressive forces the usual increase in junction current was observed. In tension, however, an increasing force first resulted in a decreasing current then an increasing current. No first order influences of time dependent lifetime effects or reversible defect creation in the junctions were observable. These observations are correlated with a theoretical model for the piezojunction effect based on stress induced changes in the energy band structure of the material. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1969
- Accession Number
- AD0683700
Entities
People
- A. D. Brooks
- J. J. Wortman
- L. K. Monteith
Organizations
- RTI International