ELECTRIC FIELD PROFILE AND ELECTRON DRIFT VELOCITIES IN LITHIUM DRIFTED SILICON,
Abstract
The electric field profile and the drift velocity of electrons in lithium drifted silicon in the direction at room temperature have been measured. By injecting short bursts of 10 keV electrons into reverse biased diodes, current pulses were produced and viewed on a sampling oscilloscope. To improve the accuracy of the measurement, a picosecond signal averaging system was employed. Electric field profiles in thin Si(Li) showed an overcompensation of the p material near the n+ contact due to the lithium diffusion process. Drift velocity measurements as a function of electric field over the range from 2.0 to 48 kV/cm were obtained. At 48 kV/cm, the drift velocity of 8.6 x 10 to the 6th power cm/sec is not yet a saturation value. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1968
- Accession Number
- AD0683711
Entities
People
- C. B. Norris
- H. R. Zulliger
- R. H. Pehl
- T. W. Sigmon
Organizations
- Stanford University