INFLUENCE OF INTERCRYSTALLINE BARRIERS ON THE KINETICS OF PHOTOCONDUCTIVITY,

Abstract

The kinetics of the electronic processes at a contact of 2 pieces of a semiconductor separated by a potential barrier, are investigated. The barrier is assumed to be created by captured carriers in surface states. The kinetics of the increase and decrease in the photocurrent is asymmetric, and at large intensities it has a characteristic S-shape. Calculated results are in reasonable agreement with results obtained experimentally on powdered ZnO.

Document Details

Document Type
Technical Report
Publication Date
Nov 14, 1968
Accession Number
AD0683952

Entities

People

  • E. A. Montrimas
  • V. I. Gaidyalis
  • Yu. K. Vishchakas

Organizations

  • National Air and Space Intelligence Center

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Agreements
  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Intensity
  • Kinetics
  • Photoconductivity
  • Semiconductors
  • Silicon Carbide
  • Solid State Electronics

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics