EXPERIMENTAL STUDY OF SUPERCONDUCTING THIN-FILM TUNNEL DIODES.
Abstract
A vacuum deposition method is described for fabricating superconducting thin-film tunnel diodes which consist of an oxidized aluminum (Al) film in contact with a lead (Pb) film. The method produced stable diodes by growing the oxide film in a low-pressure atmosphere of dry oxygen; pressure during metal-film deposition was around 0.001 torr. In some of the diodes the superconducting transition temperature of Al was near 2 degrees K. Zero-voltage current was observed in some of the a-c driven diodes, at temperatures below 1.8 degrees K. An experiment was conducted to determine the response of an Al/Al2O3/Pb superconducting thin-film diode to incoherent submillimeter radiation. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 17, 1967
- Accession Number
- AD0684444
Entities
People
- R. D. Hitchcock
Organizations
- Naval Facilities Engineering Service Center