CONCENTRATION PROFILES OF TWO-STEP DIFFUSIONS OF BORON INTO SILICON,
Abstract
The concentration profiles of boron diffused into silicon were experimentally determined for two-step diffusions yielding surface concentrations near 10 to the 18th power/cu cm. The average diffusion coefficient of boron in silicon at 1150C was found. A flat portion of the experimental curves indicating a constant boron concentration near the silicon surface is explained on the basis of a segregation phenomenon at the silicon oxide-silicon interface. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1969
- Accession Number
- AD0684907
Entities
People
- Edward P. Dudley
Organizations
- Harry Diamond Laboratories