GROWTH, PROCESSING AND CHARACTERIZATION OF BETA-SILICON CARBIDE SINGLE CRYSTALS,

Abstract

Epitaxial vapor deposition of beta-silicon carbide was continued with diborane, aluminum trichloride, and nitrogen doping. Methods for selectively removing unwanted silicon carbide from the deposited crystals are still being sought, and work is continuing to improve thin film electrocal contacts. Grinding or lapping across junctions causes poor diode performance because of surface damage and current leakage. Results on limited vapor-liquid-solid crystal growth experiments are reported. Superior electroluminescent behavior of diodes does not correlate directly with superior photoluminescent behavior. (Author)

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1969
Accession Number
AD0685172

Entities

People

  • Robert A. Mueller
  • Robert W. Bartlett

Organizations

  • SRI International

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum
  • Carbides
  • Compound Semiconductors
  • Crystal Growth
  • Crystals
  • Elements
  • Films
  • Nitrogen
  • Silicon
  • Silicon Carbide
  • Single Crystals
  • Thin Films
  • Vapor Deposition

Readers

  • Semiconductor Device Technology
  • Surface Engineering/Surface Coating Technology.