ACADEMY OF SCIENCES OF THE UKRAINIAN SSR. PHYSICO-TECHNOLOGICAL INSTITUTE. PHYSICAL PROPERTIES OF ESPECIALLY PURE METALS AND SEMICONDUCTORS (SELECTED ARTICLES),

Abstract

Contents: Growing of single crystals of silicon carbide of cubic modification; Influence of annealing of silicon in antimony vapor on the density of linear dislocations.

Document Details

Document Type
Technical Report
Publication Date
Jul 30, 1968
Accession Number
AD0685518

Entities

People

  • I. Shukurov
  • Kh. A. Shamuratov
  • M. S. Saidov

Organizations

  • National Air and Space Intelligence Center

Tags

DTIC Thesaurus Topics

  • Annealing
  • Antimony
  • Carbides
  • Compound Semiconductors
  • Crystals
  • Dislocations
  • Elements
  • Metalloids
  • Physical Properties
  • Semiconductors
  • Silicon
  • Silicon Carbide
  • Single Crystals

Readers

  • Materials Science and Engineering.
  • Political Science/ International Relations/ European Studies
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene