MATHEMATICAL SIMULATION OF THE EFFECTS OF IONIZING RADIATION ON SEMICONDUCTORS,
Abstract
A mathematical analysis is presented on the mechanism of operation in an abrupt high-low semiconductor junction. Considered in this analysis is the h-1 junction at equilibrium, in addition to forward-biased and reverse-biased modes of operation. Also considered are the processes of minority carrier accumulation and minority carrier depletion, and the influences of these processes upon the volt-ampere characteristics of this semiconductor structure. Many conclusions derived from this mathematical analysis are presented in graphical form. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1969
- Accession Number
- AD0685727
Entities
People
- David P. Kennedy
Organizations
- International Business Machines Corporation (Armonk, NY)