INVESTIGATION OF RADIATION EFFECTS IN SEMICONDUCTORS,

Abstract

Methods which have been chosen for the determination of neutron-induced lifetime degradation are evaluated. Experimental data for each method are presented and the advantages and limitations of each technique are discussed. Pre-irradiation characteristics of devices on a test bar designed for modeling neutron-induced h sub FE degradation are presented. These test bars have been fabricated with a wide range of diffusion profiles and contain tetrode and field-plate bipolar transistors in addition to small, striped geometry devices. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1968
Accession Number
AD0685753

Entities

People

  • James G. Aiden
  • James S. Crabbe
  • Martin G. Buehler
  • Walter T. Matzen

Organizations

  • Texas Instruments

Tags

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Compound Semiconductors
  • Degradation
  • Diffusion
  • Electronics
  • Experimental Data
  • Geometry
  • Radiation
  • Radiation Effects
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Transistors

Fields of Study

  • Physics

Readers

  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems