JUNCTION EFFECTS IN COMPOUND SEMICONDUCTORS.

Abstract

Instabilities and oscillation phenomena in bulk samples of Si compensated with Au, Co, or Zn are described. Vapor and epitaxial growth of GaAs(1-x)P(x) and its dislocation properties are discussed. The optical, laser, and direct-indirect properties of GaAs(1-x)P(x) are studied. The effect of donors on the direct-indirect transition is considered. Various ultrathin semiconductor platelet lasers are described, including optically pumped single mode and CW semiconductor lasers in the visible spectrum. The high transparency of platelet laser samples to their own output is shown to be due to exciton transition processes in II-VI semiconductors and due to a many-body, electron-hole-lattice (EHL) interaction in III-V semiconductors. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1969
Accession Number
AD0685783

Entities

People

  • N. Holonyak Jr.

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electron Holes
  • Epitaxial Growth
  • Lasers
  • Semiconductor Lasers
  • Semiconductors
  • Silicon Carbide
  • Spectra
  • Transitions
  • Visible Spectra

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene