DEVELOPMENT OF POLYGONIZATION IN SILICON IRON WITH FATIGUE,
Abstract
The characteristics of the dislocation structure of silicon containing iron subjected to sign-changing load under isothermal conditions at 600-1000 degrees were studied. The cyclic load activates the relaxation processes in strongly deformed zones of the grains. Increased temp. enhances the creep of the screw dislocations from out of the slip planes. Above 800 degrees the cyclic load induces polygonization. The inhomogeneity of deformation during the sign-changing load in the temperature range of intergranular failure determines the non-uniformity of the surface distribution of dislocations. The grain size formed during the cyclic load depends on the stress intensity, the number of cycles, and the temperature. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 21, 1969
- Accession Number
- AD0686084
Entities
People
- A. N. Romanov
- M. G. Lozinskii
Organizations
- National Air and Space Intelligence Center