INTERNAL QUANTUM EFFICIENCY OF GaAs1-xPx ELECTROLUMINESCENT DIODES.

Abstract

The objective of this contract has been to study and to optimize the internal quantum efficiency of GaAs1-xPx electroluminescent diodes, particularly those emitting visible radiation. This investigation has involved the effects of alloy composition, impurity types and concentrations, compositional grading, junction abruptness, and crystal growth conditions. Average junction efficiencies have been increased by an order of magnitude by optimizing the various parameters. As a result, planar diodes, emitting at 6800A, can be prepared with room-temperature external efficiencies of about 0.1%. (Author)

Document Details

Document Type
Technical Report
Publication Date
Nov 30, 1968
Accession Number
AD0686091

Entities

People

  • Charles J. Nuese
  • Henning Von Philipsborn
  • James J. Tietjen

Organizations

  • RCA Corporation

Tags

DTIC Thesaurus Topics

  • Contracts
  • Crystal Growth
  • Crystals
  • Efficiency
  • Impurities
  • Quantum Efficiency
  • Radiation
  • Transition Temperature

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Quantum Computing