RADIATION HARDENED JUNCTION FIELD EFFECT TRANSISTORS,

Abstract

The fabrication and testing of radiation hardened junction field effect transistors is described. Several structures were evaluated, including p- and n-channel devices of fixed geometry and dopant concentration, n-channel devices with fixed dopant concentrations, but different mask geometries, and n-channel devices with several channel dopant concentrations. The report describes and presents experimental verification of a technique which allows achievement of relatively high breakdown voltages in heavily doped devices. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1968
Accession Number
AD0686166

Entities

People

  • William George

Organizations

  • Motorola Mobility

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Active Electronic Components
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Fabrication
  • Field Effect Transistors
  • Geometry
  • Radiation
  • Transistors
  • Verification

Fields of Study

  • Physics

Readers

  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology