EXTRINSIC PHOTOCONDUCTIVITY IN SILICON
Abstract
A maximum impurity optical absorption cross section was measured for Ga in Si. Based on this measurement and the thickness limitations of planar processing, estimated doping densities of 1 x 10 to the 18th power/cu.cm. will be required for detector mosaics produced by planar techniques. The effects of these high doping densities on detector properties are discussed. Fabrication of Ga doped Si detectors in material doped to 2 x 10 to the 17th power/cu.cm. is described. A simple and versatile time constant measurement based on detector noise spectral density is discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1968
- Accession Number
- AD0686486
Entities
People
- R. B. Emmons
Organizations
- Sylvania Electric Products