Dislocation Pipe Diffusion in Silver Single Crystals
Abstract
A chemical sectioning technique was developed for the measurement of self diffusion in silver at low temperatures. (Silver was chosen because of its well-established high-temperature behavior, and because of the availability of the long-lived isotope Ag(110)). Layers of 100A or less are removed by an iodine reaction, and diffusion coefficients D as low as 2 x 10 to the minus 17th power sq cm/sec have been measured. A large enhancement over extrapolated high-temperature values, which has been observed below T sub m/2, is attributed to dislocation short circuiting. Determination of the pipe diffusion coefficient at the lowest measured temperature, where Harrison's type C kinetics are expected to apply, yields good agreement with the pipe diffusion coefficients D sub p calculated from published data obtained by another technique.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 25, 1969
- Accession Number
- AD0686661
Entities
People
- M. R. Achter
- R. G. Vardiman
Organizations
- United States Naval Research Laboratory