DEVELOPMENT OF THIN FILM CdS PHOTORESISTIVE ARRAYS FOR AN ANALOG multiplier.
Abstract
Arrays of nine cadmium sulfide photoresistive cells each were developed for use in analog multiplier. The program goals were to achieve a temperature coefficient of the photoresistance below 0.1 per cent per degree C, a voltage coefficient of the photoresistance less than 0.02 per cent per volt over a 10-volt range, and a response time of less than 10 msec. All photocells met the response time requirements; individual arrays met either the temperature coefficient or the voltage coefficient requirements. It was shown that the latter two characteristics tended to be mutually exclusive over the desired operating ranges. These differences could be reached by increasing the photoexcitation intensity. An interpretation of this behavior was made in terms of various competing electronic processes within a photoconductor. A description is given of the vacuum deposition, heat treatment, electroding and encapsulation processes used. The techniques used for measurement of the temperature and voltage coefficients over an extended range, the response time, the Hall effect and thermally stimulated currents are presented. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1969
- Accession Number
- AD0686777
Entities
People
- E. J. Soxman
- E. Y. Tsiang
- K. L. Orloff
- W. N. Sharp