ON THE ANALYTIC PROPERTIES OF TRANSISTOR BETA.

Abstract

The properties of current gain as used in the design of transistor circuits are analyzed in terms of parameter tolerances, physical limitations introduced by current differencing, and causes and handling of nonlinearity of current gain. It is shown that the dependence of current gain on a small difference of large numbers introduces difficulties which can only be minimized by smoothing techniques based on orthogonalization in a least-squares sense. The relation between d-c and small-signal current gains is established in terms of a Chebychev-type least-squares representation. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1969
Accession Number
AD0687265

Entities

People

  • Keats A. Pullen Jr.

Organizations

  • Ballistic Research Laboratory

Tags

DTIC Thesaurus Topics

  • Active Electronic Components
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Semiconductor Devices
  • Transistors

Readers

  • Finite Element Method (FEM) for solving Partial Differential Equations (PDEs)
  • Integrated Circuit Design and Technology.
  • Plasma Physics / Magnetohydrodynamics