MAGNETOELECTRIC EFFECTS IN SEMICONDUCTOR JUNCTIONS.

Abstract

The effect of applying a transverse magnetic field on p-n junctions of Si and Ge has been investigated, and the results are presented. Included in this investigation are in-house fabricated devices as well as a variety of commercially available Si and Ge diodes. The effects observed were universally present in all junctions investigated and suggest, therefore, the possibility of using magnetic fields for evaluating the material parameters of processed semiconductor devices. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1969
Accession Number
AD0688087

Entities

People

  • W. J. Kitchen Jr

Organizations

  • United States Army Communications-Electronics Command

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Diodes
  • Extrinsic Semiconductors
  • Magnetic Fields
  • Magnetoelectric Effect
  • Materials
  • P-N Junctions
  • Semiconductor Devices
  • Semiconductor Junctions
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Solar Photovoltaics and Thermoelectric Devices.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics