PROPERTIES OF GALLIUM PHOSPHIDE GREEN ELECTROLUMINESCENT DIODES.

Abstract

A study has been made of the electrical and optical properties of gallium Phosphide green electroluminescent diodes which were formed by zinc or beryllium diffusions into n-type sulfur-doped GaP grown by the vapor-phase epitaxial technique on GaAs substrates. The objective was to determine the dominant current transport mechanisms and the dominant radiative recombination processes and to study their dependences on the electron carrier concentration. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1969
Accession Number
AD0688696

Entities

People

  • Eugene G. Dierschke

Organizations

  • Stanford University

Tags

DTIC Thesaurus Topics

  • Beryllium
  • Diffusion
  • Electrons
  • Optical Properties
  • Phase
  • Substrates
  • Transport Ships
  • Vapor Phases

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics