TUNNELING MEASUREMENT OF ELECTRON-PLASMON INTERACTIONS IN DEGENERATE SEMICONDUCTORS,

Abstract

The electronic proper self energy due to electron-plasmon interactions in degenerate semiconductors was evaluated using the Random Phase Approximation. This self energy together with elementary models of the barrier penetration factor is used to calculate the tunneling characteristics of rectifying metal contacts on the degenerate semiconductors. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1969
Accession Number
AD0688838

Entities

People

  • C. B. Duke
  • F. Steinrisser
  • M. J. Rice

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Cooperation
  • Electronics
  • Electrons
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Measurement
  • Metal Contacts
  • Quantum Tunneling
  • Semiconductors
  • Silicon Carbide
  • Solid State Electronics
  • Tunneling

Fields of Study

  • Physics

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene