CURRENT SATURATION AND ELECTRON DRIFT MOBILITY IN ZnO.
Abstract
Acoustoelectric current saturation has been observed in the piezoelectric semiconductor ZnO. Complete current saturation is observed in one crystal from 242 degrees K to 300 degrees K. The threshold field obtained from the current-voltage characteristics has been used to determine the electron drift mobility, electron density and conductivity in the temperature range 77 degrees K to 500 degrees K. The experimental results show that the electron drift mobility is controlled by the lattice scattering at high temperatures and by traps at low temperatures. The electron density has an exponential temperature dependence with a change in the exponent at the maximum value for the electron drift mobility. The conductivity has an expected exponential temperature dependence with epsilon = 0.17 eV for two of the crystals and epsilon = 0.05 for one of the crystals. The last crystal shows a noticable deviation from the exponential dependence at high temperatures. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1968
- Accession Number
- AD0689184
Entities
People
- Andreas Rannestad
Organizations
- Norwegian Defence Research Establishment