CHANNELING IN SEMICONDUCTORS AND ITS APPLICATION TO THE STUDY OF ION IMPLANTATION,

Abstract

The channeling characteristics of protons and helium ions in various diamond-type lattices (diamond, Si, Ge, GaP, GaAs, GaSb) have been studied by means of elastic backscattering in the 0.5 to 2 MeV range. Critical angles and minimum yields have been measured and compared to theory. Channeling and electrical measurements are combined to study ion implanted impurities in silicon. The anneal behavior of Cd and Te implantations (20-50 keV) into Si at substrate temperatures of 23 degrees C and 350 degrees C were investigated. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1969
Accession Number
AD0689187

Entities

People

  • Samuel Thomas Picraux

Organizations

  • California Institute of Technology

Tags

DTIC Thesaurus Topics

  • Backscattering
  • Compound Semiconductors
  • Electrical Measurement
  • Electronics
  • Implantation
  • Impurities
  • Ion Implantation
  • Ions
  • Measurement
  • Semiconductors
  • Solid State Electronics
  • Substrates

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene