EXPERIMENTAL AND THEORETICAL PHYSICS.

Abstract

A study was proposed to examine the electronic properties of the IV-VI compound semiconductors and the group V semimetals primarily because of the intriguing properties of these materials. Many of these materials have a crystal structure which is a small deviation from simple cubic. They have narrow direct energy gaps, in general high electron and hole mobilities, and high optical and static dielectric constants. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1969
Accession Number
AD0689498

Entities

People

  • L. Esaki

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystal Structure
  • Crystals
  • Dielectric Permittivity
  • Energy Gaps
  • Materials
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Materials science
  • Physics

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene