MEASUREMENT OF THE VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDE,
Abstract
The transport properties of the electrons in GaAs have been investigated; i.e., the absolute value of the electron drift velocity, the diffusion coefficient, and the trapping cross-section has been measured for the first time as a function of the electric field. The specimen used in this experiment consists of a slab of semi-insulating boat-grown GaAs. Thin contacts were evaporated on each face; one, the cathode contact, less than 1000A thick, forms the noninjecting Schottky-barrier. The other, the anode, is ohmic. A 1 microsecond voltage pulse is placed across the diode and produces an essentially uniform electric field within it. An electron beam was pulsed on for less than 0.1 nsec during the voltage pulse. The experimental results are in excellent agreement with the Butcher-Fawcett theory, with a low field mobility of 7500 sq cm/V-sec, a threshold field of 3300 V/cm and an initial negative mobility of 2600 sq cm/V-sec. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1967
- Accession Number
- AD0690092
Entities
People
- J. G. Ruch
Organizations
- Stanford University