SCHOTTKY-BARRIER TRANSISTOR,
Abstract
The purpose of this work is to design and realize Schottky-barrier field-effect transistors with high channel doping. A theoretical analysis has been carried out to determine the designs parameters for a silicon Schottky-barrier field-effect transistor to achieve maximum doping levels in the device. To complete the design the following information is needed: The dependence of the mobility on the doping level for very thin semiconductor layers and the breakdown voltage between gate and channel gives the maximal drain voltage. This voltage must be higher than the drain voltage needed to drive the device into current saturation. The carrier mobility has been measured for different thicknesses and doping levels for silicon as well as for gallium arsenide. The results of these measurements are reported. Exact measurements of the breakdown voltage have not yet been carried out. The necessary processing steps for device fabrication as well as the results from measurements on realized transistors are reported. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 16, 1968
- Accession Number
- AD0690166
Entities
People
- Karsten E. Drangeid
Organizations
- IBM Thomas J. Watson Research Center