PHYSICAL ELECTRONICS AT MILLIMETER WAVELENGTHS.
Abstract
Theoretical and experimental studies of possible new slow-wave structures for electron tubes are presented. The structures considered are formed on the surface of p-type silicon by means of solid state diffusion of an n-type impurity. The properties of these structures are dependent on the dc bias applied between the diffused structure and the bulk silicon. The techniques employed in producing intricate structures to close tolerances are discussed in detail. The results of cold tests are compared with the calculated behavior for simple geometries. An application of simple distributed structures in the measurement of the microwave properties of semiconductors is considered. Other side effects observed with distributed structures are also discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1959
- Accession Number
- AD0690617
Entities
People
- M. C. Thurston
- T. C. Pang
Organizations
- Ohio State University