EFFECTS OF STRESS ON THE ELECTRICAL CHARACTERISTICS OF TUNNEL DIODES.

Abstract

The effects of uniaxial compression and of hydrostatic pressure on the indirect tunneling process in germanium and silicon tunnel junctions under forward bias at room temperature were studied. (Author)

Document Details

• Document Type: Technical Report
• Publication Date: Sep 01, 1964
• Accession Number: AD0690861

Entities

People

• E. M. Boone
• Hwang Sheng Lee

Organizations

• Ohio State University

Tags

Communities of Interest

• Materials and Manufacturing Processes

DTIC Thesaurus Topics

• Compression
• Diodes
• Dynamic Pressure
• Germanium
• Hydrostatic Pressure
• Quantum Tunneling
• Static Pressure
• Tunnel Diodes
• Tunneling
• Tunnels

Readers

• Mechanical Engineering/Mechanics of Materials.
• Semiconductor Device Technology