EXTRINSIC PHOTOCONDUCTIVITY IN SILICON.
Abstract
Extrinsic photoconductivity in heavily doped p-type silicon is examined theoretically and experimentally to determine whether detector mosaic formation by planar technology is possible and advantageous. The Putley condition relating the mobility, time constant, and maximum bias field for which ohmic behavior can be obtained to the performance of extrinsic photoconductors is derived and expanded to include the effect of impurity band conduction. The behavior of each of the material parameters affecting detector performance in silicon is examined as a function of doping density. A three by three array of 70 mil square detectors with 4 mil spacings has been designed and built with planar techniques for delivery. The devices are furnished with parallel coaxial line outputs. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 14, 1969
- Accession Number
- AD0690961
Entities
People
- R. B. Emmons
Organizations
- Sylvania Electric Products