STUDY OF RADIATION EFFECTS ON NOVEL SEMICONDUCTOR DEVICES

Abstract

A radiation resistant power junction field effect transistor has been designed. Several types of silicon planar Schottky barrier diodes have been exposed to ionizing radiation and the same phenomena are observed as on p-n junctions - increase in the fast surface state density and the build-up of a positive space charge in the oxide. Capacitance-voltage and Hall effect measurements have been made on high quality epitaxial GaAs before and after exposure to nuclear reactor radiation.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1969
Accession Number
AD0691044

Entities

People

  • Albert Y. Yu
  • Douglas A. Tremere
  • Edward H. Snow
  • Heinz-peter Albus

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • California
  • Electronics Laboratories
  • Field Effect Transistors
  • Geometry
  • Hall Effect
  • Ionizing Radiation
  • Nuclear Radiation
  • Nuclear Reactors
  • P-N Junctions
  • Radiation Effects
  • Scattering
  • Schottky Diodes
  • Semiconductor Devices
  • Semiconductors
  • Transistors
  • United States

Fields of Study

  • Materials science
  • Physics

Readers

  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Space
  • Space - Hall-Effect Thruster