MICROWAVE PHOTODIODES: SENSITIVITY AS A FUNCTION OF BIAS AND GEOMETRY.

Abstract

A simple model of the microwave semiconductor photodiode has been examined theoretically with an emphasis on the dependence of sensitivity on bias, frequency, and geometrical factors. The noise equivalent power (NEP) of a small diode, a large diode, and an array of small diodes have been compared. According to this theory the large diode and the array of diodes with the same total active area have the same NEP at low frequencies, but the array is superior in high-frequency NEP. These conclusions are independent of diode bias. Curves of NEP vs frequency are presented for an array of nine diodes and for an array of 100 diodes. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 09, 1969
Accession Number
AD0691202

Entities

People

  • Alan C. Macpherson

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Diodes
  • Electronics
  • Frequency
  • Geometry
  • Microwaves
  • Photodiodes
  • Semiconductors
  • Sensitivity
  • Solid State Electronics

Readers

  • Electronics Engineering
  • Phased Array Antenna Design.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Microelectromechanical Systems