MEASUREMENT OF THE NEGATIVE DIFFERENTIAL MOBILITY IN GALLIUM ARSENIDE AND GERMANIUM.

Abstract

The dependence of the drift velocity of electrons on the electric field (v-E characteristics) in GaAs at room temperature and Ge at low temperatures (below 78 degrees K) were investigated. The primary object of these investigations is the establishment and characterization of negative differential mobility regions in the v-E characteristics. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1969
Accession Number
AD0691440

Entities

People

  • Dick Mei Chang

Organizations

  • Stanford University

Tags

DTIC Thesaurus Topics

  • Electric Fields
  • Electrons
  • Elements
  • Gallium
  • Gallium Arsenides
  • Germanium
  • Group 13 Elements
  • Low Temperature
  • Measurement
  • Metals
  • Mobility
  • Post-Transition Metals

Readers

  • Calculus or Mathematical Analysis
  • Electronics Engineering
  • Graph Algorithms and Convex Optimization.

Technology Areas

  • Microelectronics