NONUNIFORM FIELD DISTRIBUTION IN AVALANCHING InSb CRYSTALS.

Abstract

The electric field distribution and current-voltage characteristic in the avalanche region is calculated for InSb crystals of both n- and p-type. It is shown that when the transit time is short compared to the carrier lifetime space charge effects make the field distribution highly nonuniform. A current controlled negative differential resistance may also develop due to the same effects. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 29, 1969
Accession Number
AD0691839

Entities

People

  • Bengt Andersson
  • Peter Weissglas

Organizations

  • Royal Institute of Technology

Tags

DTIC Thesaurus Topics

  • Electric Charge
  • Electric Fields
  • Electricity
  • Electromagnetic Fields
  • Nonuniform
  • Resistance
  • Space Charge

Fields of Study

  • Materials science
  • Physics

Readers

  • Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Space
  • Space - Hall-Effect Thruster