METHODS OF MEASUREMENT FOR SEMICONDUCTOR MATERIALS, PROCESS CONTROL, AND DEVICES.
Abstract
The report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Principal emphasis is placed on measurement of resistivity, carrier lifetime, and electrical inhomogeneities in semiconducting crystals; evaluation of wire bonds; and measurement of thermal properties of semiconductor devices. Other tasks involve: study of infrared measurement methods, deep-lying impurities in InSb, gold in silicon, and high field effects; establishment of a processing facility; evaluation of aluminum metalization and wafer die attachment; review of NASA measurement methods; and measurement of Hall effect in semiconductor crystals, second breakdown in transistors, and noise in microwave diodes. Related projects on silicon nuclear radiation detectors and specification of germanium are also described. Supplementary data concerning staff, committee activities, technical services, and publications are included as appendixes. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1969
- Accession Number
- AD0692232
Entities
People
- W. Murray Bullis
Organizations
- National Institute of Standards and Technology