INVESTIGATION OF RADIATION EFFECTS IN SEMICONDUCTORS,
Abstract
Resistivity and lifetime measurements have been taken on neutron-irradiated n-type silicon having impurity concentrations ranging from 10 to the 14th power to 10 to the 18th power/cubic cm. The values, as obtained by various techniques, basically follow expected trends. However, the measurement method becomes significant as the concentration of neutron-introduced defects becomes comparable with the original donor concentration. A second test bar for the purpose of modeling bipolar h sub FE degradation has been characterized after neutron irradiation. Pre- and post-irradiation data on the test bars indicate that the neutron-induced component of base current is predominantly in the bulk for a wide range of profiles under investigation. The base-surface concentrations ranged from 1 X 10 to the 18th power/cubic cm to greater than 10 to the 20th power/cubic cm and the base widths from less than 1 line to 14 lines. The bulk current is being related to terminal small-signal device characteristics. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1969
- Accession Number
- AD0692517
Entities
People
- James G. Aiken
- James S. Crabbe
- Martin G. Buehler
- Walter T. Matzen
Organizations
- Texas Instruments