SOME ELECTRICAL PROPERTIES OF Te FILMS AND Al-Al2O3-Te TUNNEL JUNCTIONS,
Abstract
Tellurium evaporated onto pyrex substrates at room temperature is a polycrystalline p-type semiconductor with an energy gap equal to that for a single crystal Te. Its conduction properties are dominated by impurity band conduction with a mobility of 20 sq. cm/volt sec at room temperature and to carrier density of 10 ti the 18th power holes/cc. Current-voltage characteristics of Al-Al2O3-Te tunnel junctions cannot be interpreted in terms of simple tunneling models, but do indicate some band structure effects which are largely masked by the presence of excess currents. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1969
- Accession Number
- AD0693236
Entities
People
- Michael Kühn
- V. Labunov
Organizations
- Brown University