CHEMICAL VAPOR DEPOSITION OF BORON CARBIDE.
Abstract
The chemical vapor deposition of boron carbide (B4C) was studied with the objective of preparing unusually hard specimens. Diamond pyramid microhardnesses at 100 gram load as high as 4800 kg/sq mm (20 percent greater than the value of 4000 kg/sq mm for hot-pressed B4C) were obtained on deposits prepared from BCl3 and CH4 at 2000-2100C. Massive specimens of such deposits could not be produced, but thick deposits were obtained at 1300C using a large excess of H2 and CH4 with the BCl3. Hardness and modulus of these low temperature deposits were normal (4000 kg/sq mm and 58,000,000 lb/sq in., respectively), and were not increased by thermal annealing. Doping of B4C with silicon or titanium had no substantial effect on hardness. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1969
- Accession Number
- AD0693882
Entities
People
- Arthur W. Moore
- Herbert F. Volk