CALCULATED EFFICIENCIES OF PRACTICAL GaAs AND Si SOLAR CELLS INCLUDING THE EFFECT OF BUILD-IN ELECTRIC FIELDS.
Abstract
The performance of GaAs solar cells has been calculated as a function of the doping levels, using practical values for the transport parameters. Calculations show that surface recombination is a more probable cause of the poor efficiencies obtained in practice than recombination in the junction region. Electric fields built into the cell by doping gradations may be used to reduce surface losses and produce an efficiency exceeding 20% for a surface recombination velocity of 10 to the 6th power cm/sec. This figure allows for the finite resistance of the surface layer, the effect of which is considered in detail for several cases. Results for Si cells are also presented. These are well in accord with the values obtained in practice. For both materials consideration is given to the degradation brought about by particle bombardment. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1968
- Accession Number
- AD0694117
Entities
People
- B. Ellis
- T. S. Moss
Organizations
- Royal Aircraft Establishment