ON THE THEORY OF THE DESTRIAU EFFECT.

Abstract

A novel model of the Destriau effect (ac EL in ZnS(Cu)) is presented that looks capable of interpreting in a consistent way all the principal experimental features of EL. This result is obtained through consideration of the semiconducting properties of definite partial dislocations bordering stacking faults in hexagonal structure basal planes. After a thorough critical survey of existing theories, the crystal defect spoken of is described and its properties illustrated, showing how they lead to the occurrence of the Destriau effect. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1969
Accession Number
AD0694128

Entities

People

  • Adriana Mojoni
  • Gianluigi Busca
  • Guido Bonfiglioli
  • Piero Brovetto

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Crystal Defects
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Dislocations

Readers

  • Materials Science and Engineering.