THE GROWTH OF THIN NICKEL FILMS ON A (III) ALUMINIUM SURFACE.
Abstract
Nickel films 35A thick were deposited in UHV on to clean (III) aluminium surfaces at various temperatures between 70C and 330C, to determine over what temperature range one can obtain a thin continuous layer of Ni or Ni rich phase. At 70C the Ni formed an epitaxial layer containing small epitaxial particles of AlNi. At 250C a continuous layer of Al3Ni was produced with no preferred orientation. At 330C an island structure was obtained with the islands elongated in the Al<110> directions: the islands were unstable at 330C and tended to become spherical to minimise their surface area. Comparison with deposits on NaCl indicated that Ni atoms are more mobile on Al at about 300C than they are on NaCl at the same temperature. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1968
- Accession Number
- AD0694302
Entities
People
- G. Dorey
Organizations
- Royal Aircraft Establishment