ELECTRON-ELECTRON SCATTERING EFFECTS IN THE LOW-TEMPERATURE LORENZ NUMBERS OF DILUTE Pd-Ni ALLOYS,

Abstract

The thermal and electrical resistivities of Pd-Ni alloys at concentrations ranging from 0 to 1.0 at-% Ni have been measured at temperatures between 2 and 20K. The Lorenz numbers Le appropriate to electron-electron scattering have been extracted from the data and are found to be relatively insensitive to Ni concentration. A theoretical calculation of Le has been carried out under the assumption that the entire current is carried by s electrons which are scattered from spin density fluctuations of the electrons in the d band. A consistent interpretation of the data is obtained by employing the local enhancement model, while the uniform enhancement model is found to yield values of Le which decrease too rapidly with increasing Ni concentration to reasonably represent the experimental results. The calculated value of Le is significantly smaller than the experimental value for pure Pd; it is felt this may be due to the neglect of detailed band structure effects in this work. Lorenz numbers for Baber scattering have also been calculated by using Coulomb interaction screened by the d electrons. It is found that the presence of Baber scattering cannot remove the discrepancy between theory and experiment for pure Pd. The Baber scattering model is also used to calculate the Le for rhenium and gives very good agreement with experiment. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 15, 1969
Accession Number
AD0694453

Entities

People

  • A. I. Schindler
  • D. L. Mills
  • J. T. Schriempf

Organizations

  • United States Naval Research Laboratory

Tags

DTIC Thesaurus Topics

  • Agreements
  • Band Structures
  • D Band
  • Electron Scattering
  • Electrons
  • Energy Bands
  • Low Temperature
  • Physical Properties
  • Scattering
  • Solid State Properties

Fields of Study

  • Physics

Readers

  • Powder metallurgy of Titanium alloys.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Theoretical Analysis.

Technology Areas

  • Microelectronics