GROWTH, PROCESSING, AND CHARACTERIZATION OF BETA-SILICON CARBIDE SINGLE CRYSTALS,
Abstract
Techniques were developed for fabricating Hall samples for the evaluation of epitaxial layers of beta-silicon carbide. Methods were developed for easy determination of the (111) surface of the beta-silicon carbide substrates. Epitaxial growth on only one side of the substrate was accomplished by gluing the substrate to the pedestal with a sugar solution. Measurements made on an n-type layer deposited on an n-type substrate indicate that the epitaxial layer has much higher resistivity than has been obtained in solution-grown crystals. p-Type substrates were also grown and evaluated. Their impurity concentration was estimated to be in the range 10 to the 20th power -10 to the 21st power/cu cm. The Hall mobility of the holes at room temperature was 4 sq cm/V sec. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1969
- Accession Number
- AD0694494
Entities
People
- Arne Rosengreen
Organizations
- SRI International