STRAIN SENSITIVITY IN INDIUM ANTIMONIDE FILMS,
Abstract
The stress effect was measured and the effects of electron concentration and film thickness on stress-sensitivity were studied in InSb thin films deposited by flash evaporation of commercial InSb powder on a heated glass substrate. Concentration of electrons varied by autodoping within 5 x 10 to the 16th power to 3 x 10 to the 18th power electrons/cc. Electrical characteristics of the films of varied thickness (0.3-1.9 micrometers) were measured and the data were tabulated. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 30, 1969
- Accession Number
- AD0694844
Entities
People
- E. I. Bolvanovich
- N. N. Sirota
Organizations
- National Air and Space Intelligence Center