A STUDY OF THE PERFORMANCE OF SILICON STRAIN GAGES ON ALTERNATING CURRENT UNDER STATIC AND DYNAMIC CONDITIONS,
Abstract
The operation of a strain gage based on silicon strain transducers and operating under a-c static or a-c dynamic conditions is described. The transducers used are p-type silicon crystals with either gold or platinum leads soldered to the crystal sides to obtain ohmic contacts. In order to obtain a linear dependence of strain gage output signal on changes in transducer resistance caused by strain, a difference circuit is used for the strain gage. The strain gage output is expressed by an equation in the text. The strain gage was tested under both static and dynamic operating conditions; the strain sensitivity of the silicon transducers was found to be independent of frequency in the 50Hz--50kHz range. A better linear dependence of the output signal on the transducer resistance change was obtained by using the difference circuit described than could have been obtained if a d-c bridge circuit has been used.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 30, 1969
- Accession Number
- AD0695329
Entities
People
- A. V. Sandulov
- I. I. Maryamova
- R. A. Pelenskii
- Yu. N. Zaganyach
Organizations
- National Air and Space Intelligence Center