PREPARATION OF B-MODIFICATION SILICON CARBIDE ALLOYED WITH VARIOUS IMPURITIES,
Abstract
The beta-modification of silicon carbide can be obtained by any of the following methods: (1) synthesis from silicon and carbon (graphite) at 1400-1500 degrees C, which yields beta-SiC in the form of a dark powder of non-stoichiometric composition; (2) crystallization from melts of silicon with certain metals, a process based on the substantial temperature variation of the solubility of silicon carbide in fused metals; beta-SiC is obtained in this case in the form of very small plates and needles; (3) thermal decomposition or reduction of compounds containing silicon and carbon on a surface heated to 1400-2200 degrees C. The report reviews, analyzes, and evaluates these preparation methods.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 03, 1969
- Accession Number
- AD0695388
Entities
People
- M. B. Reifman
- N. K. Prokofeva
Organizations
- National Air and Space Intelligence Center