DIELECTRIC CHARACTERISTICS OF RF SPUTTERED OXIDE FILMS.
Abstract
Results of a study on the deposition of thin-film dielectrics by RF sputtering are discussed. Source materials were silicon dioxide, aluminum oxide, tantalum oxide, and hafnium oxide, each of which was deposited onto metal electrodes and counterelectroded to complete the metal oxide metal capacitor structures for evaluation purposes. Depositions were conducted normally at 0.002 torr pressure utilizing a triode type sputtering system. Comparative rates of deposition of the dielectric materials ranged from 60 to 225 A/min for the maximum available power. The deposited films were amorphous in structure, although crystallites were dispersed in the hafnium oxide. Generally, the films displayed electrical and physical characteristics comparable to their counterparts formed by other processes, indicating that the sputtering process has the potential for translating the source materials to the substrates in a form suitable for thin-film dielectric applications. Yield study results are included in terms of non-shortened capacitors and their capability to withstand predetermined dielectric field strengths as a function of electrode areas ranging from 200 to 30,000 sq mil. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1969
- Accession Number
- AD0695629
Entities
People
- I. H. Pratt
- J. J. Mccarthy
Organizations
- United States Army Communications-Electronics Command