BAND STRUCTURE AND TRANSPORT COEFFICIENTS OF V-VI COMPOUND SEMICONDUCTORS AND THEIR ALLOYS.

Abstract

This report is presented in two main sections. Section II describes some successful experimental work which removed discrepancies between de Haas-van Alphen and galvanomagnetic measurements on Bi2Te3 and indicates the existence of a higher lying conduction band minima. Work on Bi2Se3 indicates the almost spherical nature of the six valley conduction band. In section III, a calculation of the electron and hole spectra of Bi2Te3 via the empirical pseudopotential method, is given. This calculation, done with the only amenable method for such a complex compound was successful in predicting the correct number of valence and conduction band extremes as well as showing the need for careful inclusion of the spin-orbit terms. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1969
Accession Number
AD0696244

Entities

People

  • Gerald R. Miller

Organizations

  • University of Utah

Tags

DTIC Thesaurus Topics

  • Band Structures
  • Complex Compounds
  • Compound Semiconductors
  • Conduction Bands
  • Energy Bands
  • Quantum Properties
  • Semiconductors
  • Silicon Carbide
  • Spin-Orbit Interaction

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Software Engineering
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Space